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| SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2564 (F8F60VX2) 600V 8A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The *oe Avalanche resistance guaranteed. APPLICATION *oe Switching power supply of OUTLINE DIMENSIONS Case : E-pack Case : FTO-220 (Unit : mm) AC 100-200V input *oe Inverter *oe Power Factor Control Circuit RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Tstg Storage Temperature Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* DC*j i ID Continuous Drain Current* Peak) i IDP Continuous Source Current* DC*j i IS Total Power Dissipation PT Single Pulse Avalanche Current IAS Tch= 25*Z Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR * i Recommended torque : 0.3Nm *j Ratings -55*150 150 600 *}30 8 24 8 50 8 2 0.5 Unit *Z V A W A kV N* E m Copyright & Copy;2000 Shindengen Electr VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2564 ( F8F60VX2 ) Min. 600 Typ. Max. 250 0.1 2.4 2.5 5.5 0.9 3.0 1.2 3.5 1.5 2.5 Unit V A S V / nC pF 80 290 ns ID = 1mA, VGS = 0V VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V ID = 4A, VDS = 10V ID = 4A, VGS = 10V ID = 1mA, VDS = 10V IS = 4A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 8A VDS = 10V, VGS = 0V, f = 1MHZ ID = 4A, RL = 37.5, VGS = 10V 42 1130 85 245 55 195 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2564 24 Tc = -55C Transfer Characteristics 25C 20 Drain Current ID [A] 16 100C 12 150C 8 4 0 VDS = 25V pulse test TYP 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2564 10 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] ID = 4A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2564 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2564 100 Safe Operating Area 10 100s Drain Current ID [A] 200s 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2564 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2564 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2564 10000 Capacitance Capacitance Ciss Coss Crss [pF] Ciss 1000 Coss 100 Crss f=1MHz Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2564 Single Avalanche Current - Inductive Load VDD = 90V VGS = 15V 0V Rg = 25 IAS = 8A 100 10 EAR = 29mJ EAS = 290mJ Single Avalanche Current IAS [A] 1 0.1 0.1 1 10 100 Inductance L [mH] 2SK2564 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2564 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VDD = 400V 200V 300 100V VGS 15 10 200 5 100 ID = 8A TYP 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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